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November 2013
FQP11N40C / FQPF11N40C
N-Channel QFET ? MOSFET
400 V, 10.5 A, 530 m Ω
Features
? 10.5 A, 400 V, R DS(on) = 530 m ? (Max.) @ V GS = 10 V,
I D = 5.25 A
? Low Gate Charge (Typ. 28 nC)
? Low Crss (Typ. 85 pF)
? 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor ’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
GD
D
S
TO-220
G
S
TO-220F
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
Parameter
FQP11N40C
FQPF11N40C
Unit
V DSS
I D
Drain to Source Voltage
Drain Current
-Continuous (T C = 25 o C)
-Continuous (T C = 100 o C)
10.5
6.6
400
10.5 *
6.6 *
V
A
A
I DM
Drain Current
- Pulsed
(Note 1)
42
42 *
A
V GSS
Gate to Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
360
11
13.5
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
135
1.07
44
0.35
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
°C
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FQP11N40C
0.93
62.5
FQPF11N40C
2.86
62.5
Unit
°C / W
°C / W
?2003 Fairchild Semiconductor Corporation
FQP11N40C / FQPF11N40C Rev. C1
1
www.fairchildsemi.com
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